三星推出高容量32GB内存 搭档下代多核心服务器处理器

韩国三星公司宣布该公司已成功推出了使用3D TSV封装技术的32GB DDR3 RDIMM内存。这款内存基于三星公司30nm DRAM ICs，其主要针对的是下一代基于多核心处理器的服务器产品。

新款32GB RDIMM内存使用了3D TSV封装技术，采用的是基于30nm工艺的三星4Gb DDR3内存芯片。这款超高容量的内存运行频率为1333MHz。功耗只有4.5W/小时，根据三星公司的介绍，这也是面向企业级服务器内存产品中功耗最低的一款。相比30nm级32GB LRDIMM内存，新32GB DDR3 RDIMM内存将可以节能30%。

这主要归功于TSV技术的应用，通过这项技术可以实现multi-stacked芯片，因此可以显著降低功耗同时可以获得更高的容量和运行速度。对此，三星半导体总裁Wanhoon Hong表示：“这些32GB RDIMMs内存完全支持下代高存储服务器对高容量，高性能的需求。我们将会继续提高更高性能和容量的内存解决方案，并会进一步增强服务器设计系统的价值分享。”

三星公司目前已经与CPU和控制器设计公司展开合作，以便更快速得推广3D-TSV服务器模块的应用，从而为基于20nm级DDR3内存芯片的拥有更高存储密度的内存铺路。

原文：

Samsung Electronics, the largest maker of DRAM in the planet, has developed 32GB DDR3 registered dual in-line memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology. The modules are based on Samsung’s 30nm DRAM ICs and are designed for next-generation servers powered by multi-core chips.

The new 32GB RDIMM with 3D TSV package technology is based on Samsung’s 4Gb DDR3 memory made using 30nm process technology. The new ultra-high density modules can operate at 1333MHz clock-speed, which is a 70% gain over preceding quad-rank 32GB RDIMMs with operational speeds of 800MHz.

The 32GB module consumes a mere 4.5W per hour – the lowest power consumption level among memory modules adopted for use in enterprise servers, according to Samsung. Compared to the 30nm-class 32GB load-reduced DIMM (LRDIMM), which offers advantages in constructing 32GB or higher memory solutions, the new 32GB module provides approximately 30% additional energy savings.

These savings are directly attributable to the adoption of TSV technology, which enables a multi-stacked chip to function at levels comparable to a single silicon chip by shortening signal lines significantly, thereby lowering power consumption and achieving higher density and operational speed.

“These 32GB RDIMMs fully support the high-density and high-performance requirements of next-generation high-capacity servers. We will keep providing memory solutions with higher performance and density, while enhancing shared value in the design of ever-greener server systems,” said Wanhoon Hong, executive vice president of memory sales and marketing at device solutions division of Samsung Electronics.

Samsung has collaborated with CPU and controller designers in addition to some current server system customers to facilitate quicker adoption of 3D-TSV server modules, and to pave the way for more easily supporting 32GB and higher-density memory modules based on 20nm-class DDR3 for use in high-capacity servers.

原文来自：xbitlabs.com